Description: Lecture, three hours; discussion, one hour; outside study, eight hours. Recommended preparation: Electrical Engineering 221B. Requisites: courses 130, 131, 200, 221, 222. Selected topics in materials science from modern Si-CMOS technology, including technological challenges in high k/metal gate stacks, strained Si FETs, SOI and three-dimensional FETs, source/drain engineering including transient-enhanced diffusion, nonvolatile memory, and metallization for ohmic contacts. Letter grading.

Units: 4.0